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Characterization and Field Emission Studies of Uniformly Distributed Multi-Walled Carbon Nanotubes (MWCNTs) Film Grown by Low-pressure Chemical Vapour Deposition (LPCVD)

机译:低压化学气相沉积(LPCVD)生长的均匀分布多壁碳纳米管(MWCNT)膜的表征和场发射研究

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Carbon nanotubes are synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) system using NH_3:C_2H_2:H_2 gas mixtures on iron coated silicon substrate. The iron catalyst was coated on silicon using RF-sputtering method. The growth temperature was kept at 600℃ and growth time was 10 mins. The carbon nanotubes are found to have diameters ranging from 50 to 80 nm and length of up to a few tens of microns. Raman spectra indicate that the CNTs are highly graphitized and several peaks are also found at low frequency range from 100 cm~(-1) to 500 cm~(-1), which are assigned to the radial breathing mode (RBM) which is the characteristic of single wall carbon nanotubes. Therefore, this sample also contains single walled carbon nanotubes also. The carbon nanotubes showed a turn-on field of 2.63 V/μm and the maximum current density of 2 mA/cm~2. The field enhancement factor was calculated to be 3.941 × 10~3 for as grown carbon nanotubes. The carbon nanotubes grown at this lower temperature show good field emission and are suitable for device applications.
机译:碳纳米管是通过低压化学气相沉积(LPCVD)系统在涂铁的硅基板上使用NH_3:C_2H_2:H_2气体混合物合成的。使用RF溅射方法将铁催化剂涂覆在硅上。生长温度保持在600℃,生长时间为10分钟。碳纳米管的直径范围为50至80 nm,长度可达数十微米。拉曼光谱表明碳纳米管高度石墨化,并且在100 cm〜(-1)至500 cm〜(-1)的低频范围内也发现了几个峰,这些峰被分配为the气呼吸模式(RBM)。单壁碳纳米管的特性因此,该样品也包含单壁碳纳米管。碳纳米管的导通电场为2.63 V /μm,最大电流密度为2 mA / cm〜2。对于生长的碳纳米管,场增强因子经计算为3.941×10〜3。在此较低温度下生长的碳纳米管显示出良好的场发射,适合用于设备应用。

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