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Controlling the magnetic and optical responses of a MoS2 monolayer by lanthanide substitutional doping: a first-principles study

机译:通过镧系元素取代掺杂控制MOS2单层的磁性和光学响应:第一原理研究

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摘要

The electronic, magnetic and optical properties of lanthanide substitutional doping (similar to 2% concentration) on the MoS2 monolayer have been investigated within the density functional theory formalism together with the Hubbard correction (DFT+U). The dopants investigated include Ce, Eu, Gd, Lu and Tm. The calculated dopant substitutional energies under both Mo-rich and S-rich conditions suggest that it is possible to experimentally realize the lanthanide doped MoS2 monolayer systems. The Eu, Gd and Tm dopants induce strong magnetization in the host lattice. The electronic structure calculations reveal that the dopants have a p-type character and they exhibit a half-metallic behavior in the Gd and Eu doped systems. A dilute magnetic semiconducting behavior can also be realized in Gd, Eu and Tm doped systems by slightly tuning the Fermi level. All the dopants refine the optical responses of the host system with the onset of the optical absorption edge shifting to lower energies within the visible range (red shift phenomenon). We observe an optical anisotropy for two different directions of the electric field (E) polarizations, i.e. parallel, EJ, and perpendicular, E perpendicular to, to the xy-plane. Lanthanide substitutional doping significantly influences the electron energy loss spectra (EELS), absorption spectra, and dielectric properties of the host MoS2 monolayer. Furthermore, we notice that lanthanide substitutional doping could enhance the photocatalytic properties of the MoS2 monolayer.
机译:在密度泛函理论形式主义中,研究了MOS2单层上的镧系元素的电子,磁性和光学性质的镧系元素掺杂(类似于2%浓度),并与哈伯德校正(DFT + U)一起研究。研究的掺杂剂包括CE,EU,GD,LU和TM。在富含Mo的富含型和富型条件下计算的掺杂剂的替代能量表明,可以通过实验地实现镧系元素掺杂MOS2单层系统。欧盟,GD和TM掺杂剂在主晶格中诱导强磁化。电子结构计算表明,掺杂剂具有p型特征,并且它们在GD和EU掺杂系统中表现出半金属行为。通过稍微调整费米水平,还可以在GD,EU和TM掺杂系统中实现稀释磁半导体行为。所有掺杂剂通过光学吸收边缘转移到可见范围内的较低能量(红色移位现象),所有掺杂剂改进了主机系统的光学响应。我们观察到用于两个不同方向的电场(e)偏振的光学各向异性,即平行,ej和垂直,垂直于xy平面。镧系元素替代掺杂显着影响主机MOS2单层的电子能损光谱(EEL),吸收光谱和介电性质。此外,我们注意到镧系元素的取代掺杂可以增强MOS2单层的光催化性质。

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