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Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study

机译:单层MOS2的带隙工程和近红外-II光学性质:第一原理研究

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摘要

The fluorescence-based optical imaging in the second near-infrared region (NIR-II, 1,000–1,700 nm) has broad applications in the biomedical field, but it is still difficult to find new NIR-II fluorescence materials in the two dimension. As a crucial characteristic of the electronic structure, the band structure determines the fundamental properties of two-dimensional materials, such as their optical excitations and electronic transportation. Therefore, we calculated the electronic structures and optical properties of different crystalline phases (1T phase and 2H phase) of pure monolayer MoS2 films and found that the 1T phase has better absorption and thus better fluorescence in the NIR-II window. However, its poor stability makes the 1T-phase MoS2 less useful in vivo bioimaging. By introducing vacancy defects and doping with foreign atoms, we successfully tuned the bandgap of the monolayer 2H-MoS2 and activated it in the NIR-II. Our results show that by engineering the vacancy defects, the bandgap of the 2H phase can be tailored to around 1 eV, and there are three candidates of vacancy structures that exhibit strong absorption in the NIR-II.
机译:在第二近红外区域(NIR-II,1,000-1,700nm)中的荧光基光学成像在生物医学领域具有广泛的应用,但仍然难以在两个尺寸中找到新的NIR-II荧光材料。作为电子结构的关键特性,频带结构决定了二维材料的基本特性,例如它们的光学激发和电子运输。因此,我们计算了纯单层MOS2膜的不同结晶相(1T相和2H相)的电子结构和光学性质,发现1T相具有更好的吸收,从而在NIR-II窗口中更好地荧光。然而,其稳定性差使得1T相MOS2在体内消影中不太有用。通过引入空位缺陷和掺杂外部原子,我们成功调整了单层2H-MOS2的带隙并在NIR-II中激活它。我们的研究结果表明,通过工程空置缺陷,2H相的带隙可以量身定制到大约1eV,并且存在三种空位结构的候选,在NIR-II中表现出强烈吸收。

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