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机译:高近红外透射率,钒掺杂氧化铟(V:In2O3)薄膜通过电子束蒸发,高强度橙色发光
Rajshahi Univ Engn &
Technol Dept Phys Rajshahi 6204 Bangladesh;
Rajshahi Univ Engn &
Technol Dept Elect &
Telecommun Engn Rajshahi 6204 Bangladesh;
Univ Rajshahi Dept Appl Phys &
Elect Engn Rajshahi 6205 Bangladesh;
Univ Rajshahi Dept Appl Phys &
Elect Engn Rajshahi 6205 Bangladesh;
Univ Rajshahi Dept Appl Phys &
Elect Engn Rajshahi 6205 Bangladesh;
Univ Rajshahi Dept Appl Phys &
Elect Engn Rajshahi 6205 Bangladesh;
V: In2O3 thin films; Amorphous; Average transmittance; Optical band gap; Photoluminescence; Intrinsic defects;
机译:高近红外透射率,钒掺杂氧化铟(V:In2O3)薄膜通过电子束蒸发,高强度橙色发光
机译:退火对电子束蒸发沉积铯掺杂氧化钨薄膜近红外屏蔽性能的影响
机译:衬底温度对活化电子束蒸发沉积锡掺杂氧化铟薄膜性能的影响
机译:通过电子束蒸发制备的欧掺杂富含富含含硅氧化硅膜的强烈的光致发光
机译:通过电子束共蒸发沉积的高温超导体薄膜的加工和表征。
机译:通过超声化学喷涂技术沉积的掺杂铟的氧化锌薄膜从乙酰丙酮锌和氯化铟开始
机译:基材温度对掺杂型氧化铟氧化物膜的性能蒸发的影响