Effect of substrate temperature on the material properties of the Y2SiO5: Ce3+ thin film by pulsed laser deposition (PLD) method

摘要

The effect of substrate temperature on the material properties Y2SiO5: Ce3 + thin film deposited by the pulsed laser deposition method reported. The deposition temperatures used are room temperature, 150, 250, 350, 450 and 6000 C. XRD analysis shows that the average crystallite size is about 1.66 nm. The material is monoclinic in structure with the most prominent diffraction peak at 29.20. An increment in surface thickness was observed as the deposition temperature increases from 150 to 450 degrees C and decreases from 450 to 600 degrees C. The decrease in surface thickness ascribes to a reduci.tion in deposition rate. The main photoluminescence (PL) emission peak was observed at 465 mu, which is attributed to the electronic transition from 5d -> 4f of the Ce3 + orbitals. The excitation peak was detected at 337 nm, which can be attributed to the transition of an electron from the ground state (2F5/2) to the excited state (5d) of Ce3 +. The highest emission intensity occurs with an excitation wavelength of 337 nm for all deposition temperatures. The maximum decay time was observed at a deposition temperature of 4500 C. The CIE was deployed at an emission wavelength of 465 nm, and the blue color is the corresponding color. The maximum ultraviolet-visible spectrum (UV-vis) absorbance was observed at around 337 nm. The scanning electron microscope (SEM) images show that, the morphology changes as the substrate temperature changes. The Energy Dispersive X-ray Spectrometer (EDS) shows the presence of all the elements of the compound matrix (Y, Si, O, and Ce) with their respective atomic weights.