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机译:高性能薄h:低温下PECVD沉积的Sion OLED封装层
Korea Adv Inst Sci &
Technol Dept Mat Sci &
Engn Smart &
Soft Mat &
Devices Lab SSMD 291 Daehak Ro Daejeon 34141 South Korea;
Korea Adv Inst Sci &
Technol Dept Mat Sci &
Engn Smart &
Soft Mat &
Devices Lab SSMD 291 Daehak Ro Daejeon 34141 South Korea;
ETRI Real Device Res Div Flexible Device Res Grp 218 Gajeong Ro Daejeon 34129 South Korea;
Dong Woo Fine Chem 35 Poseunggongdan Ro 117 Beon Gil Pyeongtaek Si 17956 Gyeonggi Do South Korea;
Korea Adv Inst Sci &
Technol Dept Chem &
Biomol Engn FTFL 291 Daehak Ro Daejeon 34141 South Korea;
Korea Adv Inst Sci &
Technol Dept Chem &
Biomol Engn FTFL 291 Daehak Ro Daejeon 34141 South Korea;
Korea Adv Inst Sci &
Technol Dept Mat Sci &
Engn Smart &
Soft Mat &
Devices Lab SSMD 291 Daehak Ro Daejeon 34141 South Korea;
机译:高性能薄h:低温下PECVD沉积的Sion OLED封装层
机译:低温PECVD沉积OLED用SiNx薄膜阻挡层的长期稳定性
机译:OLED低温ALD沉积Al2O3薄膜的优化。
机译:通过常规PECVD对高质量的氧氮化硅(SION)的低温沉积用于OLED包封
机译:用于生物医学可植入设备的原子层沉积氧化铝和聚对二甲苯C双层封装
机译:具有稳健的Zn-O薄膜晶体管双层异质结构设计和低温制造工艺使用真空和溶液沉积层
机译:高性能薄h:低温下PECVD沉积的Sion OLED封装层