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首页> 外文期刊>RSC Advances >High electrostrictive properties and energy storage performances with excellent thermal stability in Nb-doped Bi0.5Na0.5TiO3-based ceramics
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High electrostrictive properties and energy storage performances with excellent thermal stability in Nb-doped Bi0.5Na0.5TiO3-based ceramics

机译:高电致伸缩性能和能量存储性能,具有优异的NB掺杂Bi0.5na0.5tio3陶瓷的热稳定性

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摘要

As a promising candidate material replacing Pb(ZrTi)O-3 (PZT), the lead-free Bi0.5Na0.5TiO3 (BNT) system exhibits outstanding piezoelectric and ferroelectric properties. However, the weak thermal stability of these electric properties hampers its practical applications. In this work, we designed and prepared novel Nb-doped 0.76Bi(0.5)Na(0.5)TiO(3)-0.24Bi(0.5)K(0.5)TiO(3) (BNT-BKT) ceramics with superior temperature stability of electric properties. Both strain as well as discharging properties of 5% Nb-doped BNT-BKT ceramics varied less than 3% and 12.5% respectively from room temperature to 160 degrees C, ascribed to the enlarged gap between the depolarized temperature (T-d or TF-R) and the maximum dielectric temperature (T-m). In addition, we investigated the impacts of Nb doping on the phase transition, dielectric, piezoelectric and ferroelectric behaviors of BNT-BKT ceramics in detail. Temperature dependent dielectric spectrums indicated that T-d decreased below room temperature with Nb modifying, revealing that the phase structure transformed from ferroelectric into ergodic relaxor. Accordingly, the maximum strain value of 0.21% and recoverable energy storage of 1.2 J cm(-3) were simultaneously acquired at the critical composition of 5% Nb incorporation. Our results provide an effective means of obtaining BNT-based ceramics with simultaneously thermally stable strain and discharge properties for wide temperature actuator and capacitor applications.
机译:作为替换的Pb(ZrTi)O 3(PZT),无铅Bi0.5Na0.5TiO3(BNT)系统表现出杰出的压电和铁电性能有希望的候选材料。然而,这些电气性质的弱热稳定性妨碍了其实际应用。在这项工作中,我们设计和制备的新型NB掺杂的0.76(0.5)Na(0.5)TiO(3)-0.24Bi(0.5)K(0.5)TiO(3)(BNT-BKT)陶瓷,具有卓越的温度稳定性电气性质。菌株以及5%NB掺杂的BNT-BKT陶瓷的排出性分别在室温至160℃下变化小于3%和12.5%,归因于去极化温度(TD或TF-R)之间的扩大间隙和最大介电温度(Tm)。此外,我们详细探讨了Nb掺杂对BNT-BKT陶瓷的相变,电介质,压电和铁电行为的影响。温度依赖性介电光谱表明T-D与Nb改性下方的室温降低,揭示从铁电变换到ergodic弛豫的相位结构。因此,在5%NB掺入的临界组合物中同时获得0.21%的最大应变值和1.2Jcm(-3)的可恢复能量储存。我们的结果提供了一种获得基于BNT的陶瓷的有效方法,其具有同时热稳定的应变和用于宽温度执行器和电容器应用的放电性能。

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  • 来源
    《RSC Advances》 |2019年第37期|共8页
  • 作者单位

    Shanghai Univ Sch Environm &

    Chem Engn Shanghai 200444 Peoples R China;

    Chinese Acad Sci Key Lab Inorgan Funct Mat &

    Devices Shanghai Inst Ceram Shanghai 200050 Peoples R China;

    Shanghai Univ Sch Environm &

    Chem Engn Shanghai 200444 Peoples R China;

    Chinese Acad Sci Key Lab Inorgan Funct Mat &

    Devices Shanghai Inst Ceram Shanghai 200050 Peoples R China;

    Chinese Acad Sci Key Lab Inorgan Funct Mat &

    Devices Shanghai Inst Ceram Shanghai 200050 Peoples R China;

    Chinese Acad Sci Key Lab Inorgan Funct Mat &

    Devices Shanghai Inst Ceram Shanghai 200050 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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