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Strain vs. charge mediated magnetoelectric coupling across the magnetic oxide/ferroelectric interfaces

机译:菌株与电荷介导磁氧化物/铁电界面的静电耦合

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摘要

We utilize polarized neutron reflectometry (PNR) in consort with ab initio based density functional theory (DFT) calculations to study magnetoelectric coupling at the interface of a ferroelectric PbZr0.2Ti0.8O3 (PZT) and magnetic La0.67Sr0.33MnO3 (LSMO) heterostructure grown on a Nb-doped SrTiO3 (001) substrate. Functional device working conditions are mimicked by gating the heterostructure with a Pt top electrode to apply an external electric field, which alters the magnitude and switches the direction of the ferroelectric (FE) polarization, across the PZT layer. PNR results show that the gated PZT/LSMO exhibits interfacial magnetic phase modulation attributed to ferromagnetic (FM) to A-antiferromagnetic (A-AF) phase transitions resulting from hole accumulation. When the net FE polarization points towards the interface (positive), the interface doesn't undergo a magnetic phase transition and retains its global FM ordered state. In addition to changes in the interfacial magnetic ordering, the global magnetization of LSMO increases while switching the polarization from positive to negative and decreases vice versa. DFT calculations indicate that this enhanced magnetization also correlates with an out of plane tensile strain, whereas the suppressed magnetization for positive polarization is attributed to out of plane compressive strain. These calculations also show the coexistence of FM and A-AF phases at zero out of plane strain. Charge modulations throughout the LSMO layer appear to be unaffected by strain, suggesting that these charge mediated effects do not significantly change the global magnetization. Our PNR results and DFT calculations are in consort to verify that the interfacial magnetic modulations are due to co-action of strain and charge mediated effects with the strain and charge effects dominant at different length scale.
机译:我们利用与AB初始密度泛函理论(DFT)计算的聚合中的偏振中子反射计(PNR),以研究铁电PBZR0.2TI0.8O3(PZT)和磁性LA0.67SR0.33MNO3(LSMO)异质结构的界面处的磁电耦合在Nb掺杂的Srtio3(001)衬底上生长。通过用PT顶电极涂覆异质结构以施加外部电场来模拟功能装置工作条件,以施加外部电场,该外部电场改变幅度并在PZT层上切换铁电(Fe)偏振的方向。 PNR结果表明,门控PZT / LSMO表现出归因于铁磁性(FM)的界面磁相调制,从孔累积产生的反式磁性(A-AF)相变。当净FE偏振点朝向接口(正)时,界面不会经历磁相转换并保留其全局FM有序状态。除了界面磁化排序的变化之外,LSMO的全球磁化在切换从正为负数和减少反之亦然的同时增加。 DFT计算表明,这种增强的磁化性也与平面拉伸应变外相关,而抑制偏振的抑制磁化归因于平面压缩菌株。这些计算还显示FM和A-AF相的共存在零间隙中的零间隙。整个LSMO层的电荷调制似乎不受应变的影响,表明这些电荷介导的效果不会显着改变全局磁化。我们的PNR结果和DFT计算是在聚合中,以验证界面磁性调制是由于应变和充电介导的效应的抗菌效应,并且电荷效应以不同的长度尺度显着。

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  • 来源
    《RSC Advances 》 |2019年第23期| 共9页
  • 作者单位

    New Mexico State Univ Dept Phys Las Cruces NM 88001 USA;

    New Mexico State Univ Dept Phys Las Cruces NM 88001 USA;

    Calif State Univ Los Angeles Dept Phys Los Angeles CA 90032 USA;

    Paul Scherrer Inst Swiss Light Source CH-5232 Villigen Switzerland;

    Los Alamos Natl Lab Ctr Integrated Nanotechnol CINT Los Alamos NM 87544 USA;

    Oak Ridge Natl Lab Neutron Scattering Div Oak Ridge TN 37831 USA;

    New Mexico State Univ Dept Phys Las Cruces NM 88001 USA;

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  • 正文语种 eng
  • 中图分类 化学 ;
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