Area-Efficient On-Chip Transient Detection Circuit for System-Level ESD Protection Against Transient-Induced Malfunction

摘要

A new on-chip transient detection circuit with superior area efficiency is proposed against the system malfunction resulting from system-level electrostatic discharge ( ESD) events. With dual-latched structure, a better area efficiency can be achieved by the reduced time constant inquiry. The proposed transient detection circuit with a silicon area of 40 mu m x 60 mu m has been fabricated in a 0.18-mu m CMOS process with 1.8-V devices. The detection sensitivity has been successfully verified under +/- 200 V system-level ESD tests. To achieve the "Class B" specification of IEC 61000-4-2 standard, the proposed transient detection circuit serves as a safety guard for the system. Through the hardware/firmware co-design, the auto-recovery procedure can be activated by the proposed transient detection circuit sending out a warning signal. With the proposed transient detection circuit co-works with the system program, the immunity level of microelectronic products against the electromagnetic compatibility (EMC) of ESD events can be effectively improved.