Focused electron beam induced deposition of copper with high resolution and purity from aqueous solutions

摘要

Electron-beam induced deposition of high-purity copper nanostructures is desirable for nanoscale rapid prototyping, interconnection of chemically synthesized structures, and integrated circuit editing. However, metalorganic, gas-phase precursors for copper introduce high levels of carbon contamination. Here we demonstrate electron beam induced deposition of high-purity copper nanostructures from aqueous solutions of copper sulfate. The addition of sulfuric acid eliminates oxygen contamination from the deposit and produces a deposit with similar to 95 at% copper. The addition of sodium dodecyl sulfate (SDS), Triton X-100, or polyethylene glycole (PEG) improves pattern resolution and controls deposit morphology but leads to slightly reduced purity. High resolution nested lines with a 100 nm pitch are obtained from CuSO4-H2SO4-SDS-H2O. Higher aspect ratios (similar to 1: 1) with reduced line edge roughness and unintended deposition are obtained from CuSO4-H2SO4-PEG-H2O. Evidence for radiation-chemical deposition mechanisms was observed, including deposition efficiency as high as 1.4 primary electrons/Cu atom.