首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >High Purity Tungsten Nanostructures via Focused Electron Beam Induced Deposition with Carrier Gas Assisted Supersonic Jet Delivery of Organometallic Precursors
【24h】

High Purity Tungsten Nanostructures via Focused Electron Beam Induced Deposition with Carrier Gas Assisted Supersonic Jet Delivery of Organometallic Precursors

机译:通过聚焦电子束诱导沉积和载气辅助有机金属前体的超音速射流输送,实现高纯度钨纳米结构。

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

A substantially enhanced purity of tungsten nanostructures, with up to 95% of metal content relative to carbon contaminants with no postprocessing, is achieved by using a supersonic inert carrier gas jet in the continuum flow regime to deliver the organometallic precursor for focused electron beam induced deposition (FEBID). Through impact enhanced desorption of residual organic ligands at the deposition site, high kinetic energy of the gas jet assists in completing the secondary electron induced dissociation of precursor molecules, resulting in both increased metal purity and enhanced deposit growth rate. The inert gas jet at low Knudsen numbers also serves as a carrier gas to increase precursor flux to the substrate. Operating in the continuum flow regime reduces jet spreading and allows the use of smaller diameter nozzles to increase localization of precursor delivery to the deposition site. This drastic increase in localized precursor flux to the substrate is shown to compensate for the diminished sticking coefficient resulting from an increased impingement velocity of the continuum-flow gas jet relative to a molecular-flow gas jet. Increasing the jet temperature increases the delivered kinetic energy and allows tuning the balance between enhanced ligand contaminant desorption to increase deposit purity and the reduced sticking coefficient, resulting in the net increase of pure metal growth rate. Relevant physical mechanisms are discussed with support of experimental observations and multiscale numerical simulations of the gas jet, comparing the conventional molecular gas flow versus continuum gas flow. Collectively, our results suggest a promising path forward for delivery of organometallic precursors in gas phase that results in high purity metal deposition without sacrificing the high growth rate.
机译:钨纳米结构的纯度大大提高,相对于碳污染物,金属含量高达95%,无需后处理,这是通过在连续流态下使用超音速惰性载气喷射来输送有机金属前驱体以进行聚焦电子束诱导沉积而实现的(FEBID)。通过在沉积位置提高残留有机配体的解吸效果,气体喷射流的高动能有助于完成二次电子诱导的前驱体分子的离解,从而提高金属纯度和提高沉积物生长速率。低努德森数的惰性气体射流还用作载气,以增加前体通向基材的通量。在连续流状态下操作可减少射流扩散,并允许使用较小直径的喷嘴来增加前驱物向沉积位点的定位。局部到达母体的前体通量的这种急剧增加被显示为补偿由于连续流气体喷射流相对于分子流气体喷射流的撞击速度增加而导致的减小的粘附系数。射流温度的升高会增加所传递的动能,并可以调节增强的配体污染物解吸之间的平衡,从而提高沉积物纯度和降低的黏着系数,从而导致纯金属生长速度的净增加。在实验观察和气体射流的多尺度数值模拟的支持下,讨论了相关的物理机制,比较了传统的分子气体流量和连续气体流量。总体而言,我们的结果表明,在气相中输送有机金属前体的前景广阔,这将导致高纯度金属沉积而不牺牲高生长速率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号