首页>
外国专利>
Optimising deposition of material on substrate by gas stream - combining jet geometry and position and gas pressure factors for laser or particle beam induced deposition
Optimising deposition of material on substrate by gas stream - combining jet geometry and position and gas pressure factors for laser or particle beam induced deposition
Laser or particle beam-induced deposition of material from a gas stream fed to a substrate via a nozzle is optimised by determining the pressure profile at the substrate location for different nozzle geometries and positions and selecting the most suitable combination from the results. - Pressure profile is determined with the aid of a micro-mechanical gas flow sensor, mfd. by anisotropic etching of a monocrystalline silicon wafer to form a 0.5-2 microns thick tongue (2) which is connected (3) to a frame (4) formed from the wafer. The gas stream (6) from the nozzle (5) deflects the tongue.
展开▼