首页> 外国专利> Optimising deposition of material on substrate by gas stream - combining jet geometry and position and gas pressure factors for laser or particle beam induced deposition

Optimising deposition of material on substrate by gas stream - combining jet geometry and position and gas pressure factors for laser or particle beam induced deposition

机译:通过气流优化材料在基板上的沉积-结合射流的几何形状以及位置和气压因子,以进行激光或粒子束诱导的沉积

摘要

Laser or particle beam-induced deposition of material from a gas stream fed to a substrate via a nozzle is optimised by determining the pressure profile at the substrate location for different nozzle geometries and positions and selecting the most suitable combination from the results. - Pressure profile is determined with the aid of a micro-mechanical gas flow sensor, mfd. by anisotropic etching of a monocrystalline silicon wafer to form a 0.5-2 microns thick tongue (2) which is connected (3) to a frame (4) formed from the wafer. The gas stream (6) from the nozzle (5) deflects the tongue.
机译:通过确定不同喷嘴几何形状和位置的基板位置处的压力分布并从结果中选择最合适的组合,可以优化激光或粒子束诱导的从通过喷嘴送入基板的气流中沉积材料的过程。 -借助微机械气体流量传感器mfd确定压力分布。通过单晶硅晶片的各向异性蚀刻形成0.5-2微米厚的舌片(2),该舌片(3)连接到由晶片形成的框架(4)。来自喷嘴(5)的气流(6)使舌头偏转。

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