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机译:直接?单层MOS2中的间接带隙过渡由单独的Si纳米粒子引起的单层MOS2
Sun Yat Sen Univ State Key Lab Optoelect Mat &
Technol Nanotechnol Res Ctr Sch Mat Sci &
Engn Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ State Key Lab Optoelect Mat &
Technol Nanotechnol Res Ctr Sch Mat Sci &
Engn Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ State Key Lab Optoelect Mat &
Technol Nanotechnol Res Ctr Sch Mat Sci &
Engn Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ State Key Lab Optoelect Mat &
Technol Nanotechnol Res Ctr Sch Mat Sci &
Engn Guangzhou 510275 Guangdong Peoples R China;
Sun Yat Sen Univ State Key Lab Optoelect Mat &
Technol Nanotechnol Res Ctr Sch Mat Sci &
Engn Guangzhou 510275 Guangdong Peoples R China;
Si nanoparticle; heterostructure; monolayer MoS2; direct?indirect bandgap transition;
机译:直接?单层MOS2中的间接带隙过渡由单独的Si纳米粒子引起的单层MOS2
机译:单层WS2中的应变诱导的直接-间接带隙跃迁和声子调制
机译:多体和自旋轨道对应变单层MoS2和WS2的直接-间接带隙跃迁的影响
机译:应变诱导双层MoTe2中的间接直接带隙跃迁
机译:单层MoS2中的筛选,缺陷和悬空键引起的光学损伤阈值
机译:可调带隙:六边形至四角形ZnSe结构转变的模拟证据:具有宽范围可调直接带隙的单层材料(Adv。Sci。12/2015)
机译:中等应变诱导的间接带隙和MOS2单层的传导电子