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机译:通过自催化分子束外延生长的GaAs纳米线的硼掺入抑制轴向生长
TU Wien Inst Solid State Elect Ctr Micro &
Nanostruct A-1040 Vienna Austria;
Johannes Kepler Univ Linz Ctr Surface &
Nanoanalyt A-4040 Linz Austria;
TU Wien Inst Solid State Elect Ctr Micro &
Nanostruct A-1040 Vienna Austria;
TU Wien Inst Solid State Elect Ctr Micro &
Nanostruct A-1040 Vienna Austria;
TU Wien Inst Solid State Elect Ctr Micro &
Nanostruct A-1040 Vienna Austria;
TU Wien Inst Solid State Elect Ctr Micro &
Nanostruct A-1040 Vienna Austria;
TU Wien Inst Solid State Elect Ctr Micro &
Nanostruct A-1040 Vienna Austria;
TU Wien Inst Solid State Elect Ctr Micro &
Nanostruct A-1040 Vienna Austria;
nanowires; BGaAs; molecular beam epitaxy; nanowire growth;
机译:通过自催化分子束外延生长的GaAs纳米线的硼掺入抑制轴向生长
机译:分子束外延自生生长稀氮化物GaAs / GaAsSbN / GaAs核壳纳米线
机译:通过气源分子束外延在图案化Si(111)上生长的自催化核壳GaAs / GaNAs纳米线
机译:自催化分子束外延生长的Te和Be掺杂GaAs纳米线的光电特性
机译:通过分子束外延生长的GaAs / Gaassb(N)核心壳纳米线的带隙调谐
机译:通过分子束外延生长在Si(111)衬底上生长的Au催化的GaAs纳米线的电和光学性质
机译:通过自催化分子束外延生长的GaAs纳米线的硼掺入抑制轴向生长