机译:在相干紧张的[110]的GE-Si核 - 壳体纳米线中提高空穴迁移率
Delft Univ Technol Kavli Inst Nanosci Lorentzweg 1 NL-2628 CJ Delft Netherlands;
Delft Univ Technol Kavli Inst Nanosci Lorentzweg 1 NL-2628 CJ Delft Netherlands;
TU Eindhoven Dept Appl Phys Den Dolech 2 NL-5612 AZ Eindhoven Netherlands;
Univ Twente MESA Inst Nanotechnol NanoElect Grp POB 217 NL-7500 AE Enschede Netherlands;
Univ Twente MESA Inst Nanotechnol NanoElect Grp POB 217 NL-7500 AE Enschede Netherlands;
Univ Twente MESA Inst Nanotechnol NanoElect Grp POB 217 NL-7500 AE Enschede Netherlands;
Delft Univ Technol Kavli Inst Nanosci Lorentzweg 1 NL-2628 CJ Delft Netherlands;
TU Eindhoven Dept Appl Phys Den Dolech 2 NL-5612 AZ Eindhoven Netherlands;
Univ Twente MESA Inst Nanotechnol NanoElect Grp POB 217 NL-7500 AE Enschede Netherlands;
Delft Univ Technol Kavli Inst Nanosci Lorentzweg 1 NL-2628 CJ Delft Netherlands;
Nanowire; silicon; germanium; mobility; defect-free; epitaxy;
机译:在相干紧张的[110]的GE-Si核 - 壳体纳米线中提高空穴迁移率
机译:应变Si_xGe_(1-x)-Ge-Si核-双壳纳米线异质结构,用于同时提高空穴和电子迁移率
机译:在(110) - oriented紧张的si中观察到的空穴迁移率增强
机译:SOI厚度小于4 nm的(110)取向超薄pFET中通过110单轴压缩应变增强空穴迁移率
机译:具有自洽价子带结构和高k绝缘体的应变锗和钒III p沟道反型层中的空穴迁移率。
机译:促进相干应变110取向的空穴迁移率Ge–Si核–壳纳米线
机译:促进相干应变[110]取向的Ge-Si核壳纳米线的空穴迁移率