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Strained Si_xGe_(1-x)-Ge-Si core-double-shell nanowire heterostructures for simultaneous hole and electron mobility enhancement

机译:应变Si_xGe_(1-x)-Ge-Si核-双壳纳米线异质结构,用于同时提高空穴和电子迁移率

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摘要

We report the growth, structural, and electrical characterization of epitaxial, strained SixGe1-x-Ge-Si core-double-shell nanowire heterostructures designed to provide quantum confinement of holes and electrons in the compressively strained Ge and tensile-strained Si shells, respectively. The growth utilizes the vapor-liquid-solid growth mechanism for the SixGe1-x core, followed by a sequence of in-situ ultra-high-vacuum chemical vapor deposition for the epitaxial Ge and Si shell growth. Using a combination of micro-Raman spectroscopy on individual nanowires and lattice dynamic theory, we determine a large compressive (tensile) hydrostatic strain of up to -0.9% (0.67%) in the Ge (Si) shell. We demonstrate p- and n-type metal-oxide-semiconductor field-effect transistors using SixGe1-x-Ge-Si core-double-shell nanowires as channel and observe a 500% (20%) enhancement of the average hole (electron) mobility compared to control devices using Si nanowires, due to an increased hole (electron) mobility in the compressively strained Ge (tensile strained Si) shell. An analysis of the hole transport provides the valence band offset in the core-double-shell nanowire heterostructures. Published by AIP Publishing.
机译:我们报告了外延,应变的SixGe1-x-Ge-Si核-双壳纳米线异质结构的生长,结构和电学特性,这些异质结构旨在分别在压缩应变的Ge和拉伸应变的Si壳层中提供空穴和电子的量子约束。该生长利用SixGe1-x核的气-液-固生长机制,然后进行一系列原位超高真空化学气相沉积,以进行外延Ge和Si壳生长。结合单个纳米线上的微拉曼光谱和晶格动力学理论,我们确定了Ge(Si)壳层中的最大压缩(拉伸)静水应变高达-0.9%(0.67%)。我们演示了使用SixGe1-x-Ge-Si核双壳纳米线作为沟道的p型和n型金属氧化物半导体场效应晶体管,并观察到平均空穴(电子)提高了500%(20%)与使用Si纳米线的控制设备相比,由于在受压应变的Ge(拉伸应变的Si)壳体中空穴(电子)迁移率增加,因此迁移率相对较高。空穴传输的分析提供了核-双壳纳米线异质结构中的价带偏移。由AIP Publishing发布。

著录项

  • 来源
    《Applied Physics Letters》 |2018年第11期|113102.1-113102.5|共5页
  • 作者

    Wen Feng; Tutuc Emanuel;

  • 作者单位

    Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA;

    Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:13:55

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