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Nondestructive Mapping of Long-Range Dislocation Strain Fields in an Epitaxial Complex Metal Oxide

机译:外延复合金属氧化物中远程位错应变场的无损映射

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The misfit dislocations formed at heteroepitaxial interfaces create long-ranging strain fields in addition to the epitaxial strain. For systems with strong lattice coupling, such as ferroic oxides, this results in unpredictable and potentially debilitating functionality and device performance. In this work, we use dark-field X-ray microscopy to map the lattice distortions around misfit dislocations in an epitaxial film of bismuth ferrite (BiFeO3), a well-known multiferroic. We demonstrate the ability to precisely quantify weak, long-ranging strain fields and their associated symmetry lowering without modifying the mechanical state of the film. We isolate the screw and edge components of the individual dislocations and show how they result in weak charge heterogeneities via flexoelectric coupling. We show that even systems with small lattice mismatches and additional mechanisms of stress relief (such as mechanical twinning) may still give rise to measurable charge and strain heterogeneities that extend over mesoscopic length scales. This sets more stringent physical limitations on device size, dislocation density, and the achievable degree of lattice mismatch in epitaxial systems.
机译:除了外延应变之外,在异质轴界面形成的错配脱位产生长距离应变场。对于具有强晶格耦合的系统,例如铁氧化物,这导致不可预测和潜在的衰弱功能和装置性能。在这项工作中,我们使用暗场X射线显微镜,以映射铋铁氧体(BifeO3)的外延薄膜中的错配脱位周围的晶格扭曲,是一种众所周知的多样性。我们展示了精确地量化弱,长距离应变场及其相关对称降低的能力而不改变薄膜的机械状态。我们隔离各个脱位的螺钉和边缘部件,并显示通过柔性耦合的弱电荷异质性。我们表明甚至具有小格斗错配的系统和额外的应力释放机制(例如机械孪晶)可能仍然会产生可测量的电荷和延伸介于介面长度尺度的菌株异质性。这集合了更严格的设备大小,位错密度和外延系统中可实现的格子错配的物理限制。

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