The influence of energy band bending on the photo-induced electromotive force in extrinsic semiconductors

摘要

A theory of the photo-induced electromotive force in extrinsic semiconductors accounting for the energy bands bending is developed. The non-equilibrium space charge layer and the boundary conditions in the real metal-semiconductor junction have been taken into account. It is shown that photo-induced electromotive force in an n-type semiconductor at any photo-excitation volume essentially depends on the surface potential for certain surface parameters.