首页> 外文会议>Conference on Advanced Optical Materials, Technologies, and Devices >Influence of energy bands distortion on non-steady-state photo-induced electromotive force in semiconductors
【24h】

Influence of energy bands distortion on non-steady-state photo-induced electromotive force in semiconductors

机译:能带变形对半导体中非稳态光诱导电动势的影响

获取原文

摘要

A theory of the non-steady-state photo-induced electromotive force in bipolar semiconductors accounting for the boundary conditions in a metal-semiconductor junction and distortion of energy bands near semiconductor surface is developed. It is shown that the surface potential can change essentially both the amplitude and the phase-frequency characteristic of the photo-induced electromotive force.
机译:开发了非稳态光诱导电动势的非稳态光诱导电动势的理论,其占金属半导体结中的边界条件和半导体表面附近的能带的变形。结果表明,表面电位可以基本上改变光引起电动势的幅度和相位频率特性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号