T-shaped GaAs quantum-wire lasers and the exciton Mott transition

摘要

T-shaped GaAs quantum-wire (T-wire) lasers fabricated by the cleaved-edge overgrowth method with molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal are measured to study the laser device physics and fundamental many-body physics in clean one-dimensional (1D) systems. A current-injection T-wire laser that has 20 periods of T-wires in the active region and a 0.5 mm long cavity with high-reflection coatings shows a low threshold current of 0.27 mA at 30 K. The origin of the laser gain above the lasing threshold is studied with the high-quality T-wire lasers by means of optical pumping. The lasing energy is about 5 meV below the photoluminescence (PL) peak of free excitons, and is on the electron-hole (e-h) plasma PL band at a high e-h carrier density. The observed energy shift excludes the laser gain due to free excitons, and it suggests a contribution from the e-h plasma instead. A systematic micro-PL study reveals that the PL evolves with the e-h density from a sharp exciton peak, via a biexciton peak, to an e-h-plasma PL band. The data demonstrate an important role of biexcitons in the exciton Mott transition. Comparison with microscopic theories points out some problems in the picture of the exciton Mott transition.