METHOD OF INGAAS-GAAS HETEROGENEOUS OHMIC TRANSITION PRODUCTION WITH LASER APPLICATION

摘要

The method of production of heterogeneous ohmic transition InGaAs - GaAs by means of laser consists in the fact that a board of gallium arsenide GaAs is covered with a layer of Indium In and then the gallium arsenide - indium GaAs - In interface is irradiated from the side of GaAs for 0.1 to 10 sec. by laser with output of 1 to 50 W and wavelength value above the absorption edge of GaAs.