首页> 外文期刊>Journal of Molecular Structure >Study of structural defects and crystalline perfection of near stoichiometric LiNbO_3 crystals grown from flux and prepared by VTE technique
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Study of structural defects and crystalline perfection of near stoichiometric LiNbO_3 crystals grown from flux and prepared by VTE technique

机译:用VTE技术制备的由助熔剂生长的近化学计量LiNbO_3晶体的结构缺陷和晶体完善性的研究

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Near-stoichiometric LiNbO_3 (SLN) single crystals were grown/prepared by top seeded solution growth/vapor transport equilibration (VTE) technique, and investigated for stoichiometry, disorder and structural defects. The optical absorption and Raman line-width studies revealed higher stoichiometry (i.e., higher Li/Nb) for SLN prepared by vapor transport equilibration (SLN_V) technique in comparison to SLN grown from K_2O flux (SLN_K) and Li-rich melt (SLN_L). The nearly symmetric single diffraction curve (DC), though broad, as observed for SLN_L specimen in high resolution X-rays diffraction (HRXRD) analysis depicted lesser low angle grain boundaries. On the other hand, relatively sharp DC with lowest full-width at half-maximum (FWHM ~45 arc-sec) in HRXRD and lesser Urbach energy (~80 meV) in the absorption spectra for SLN_V crystal revealed less structural defects with respect to other SLN crystals. The higher FWHM of DCs in HRXRD for SLN_L and SLN_K is attributed to growth related imperfections usually observed in solution growth. Though, VTE process results in SLN crystals with better stoichiometry and lesser structural defects but the limitation being that samples up to ~1 mm thickness can be prepared with this technique. For bulk SLN, growth from K_2O flux resulted in better stoichiometry whereas Li-rich flux resulted in better structural quality. The absorption spectra of the grown SLN crystals depicted oxygen vacancy induced electronic defects (Nb~(4+), polarons), which was further authenticated by X-ray absorption near-edge structure (XANES) analysis at Nb K edge revealing lesser Nb~(4+) defects in SLN with respect to congruent lithium niobate (CLN) crystal.
机译:通过顶部晶种溶液生长/蒸汽传输平衡(VTE)技术生长/制备接近化学计量的LiNbO_3(SLN)单晶,并研究其化学计量,无序和结构缺陷。光学吸收和拉曼线宽研究表明,与由K_2O通量(SLN_K)和富锂熔体(SLN_L)生长的SLN相比,通过蒸汽传输平衡(SLN_V)技术制备的SLN的化学计量更高(即,更高的Li / Nb)。 。在高分辨率X射线衍射(HRXRD)分析中对SLN_L标本观察到的近似对称的单晶衍射曲线(DC)虽然很宽,但是却显示出较小的低角度晶界。另一方面,相对尖锐的直流电,HRXRD中半峰全宽最低(FWHM〜45 arc-sec)最低,而SLN_V晶体的吸收光谱中的Urbach能量较小(〜80 meV),相对于其他SLN晶体。对于SLN_L和SLN_K,HRXRD中DC的FWHM较高,这归因于通常在溶液生长中观察到的与生长相关的缺陷。虽然,VTE工艺导致SLN晶体具有更好的化学计量比和较少的结构缺陷,但其局限性在于该技术可以制备厚度约〜1 mm的样品。对于块状SLN,K_2O助熔剂的生长导致更好的化学计量,而富Li的助熔剂导致更好的结构质量。生长的SLN晶体的吸收光谱描述了氧空位引起的电子缺陷(Nb〜(4+),极化子),通过Nb K边缘的X射线吸收近边缘结构(XANES)分析进一步证实了该缺陷,发现Nb〜较少。关于同质铌酸锂(CLN)晶体,SLN中存在(4+)缺陷。

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