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Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientations
Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientations
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机译:方法,其通过适当地选择晶体取向降低与再生长浅结晶体管的晶体缺陷
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摘要
By appropriately adapting the length direction and width directions of transistor devices with respect to the crystallographic orientation of the semiconductor material such that identical vertical and horizontal growth planes upon re-crystallizing amorphized portions are obtained, the number of corresponding stacking faults may be significantly reduced. Hence, transistor elements with extremely shallow PN junctions may be formed on the basis of pre-amorphization implantation processes while substantially avoiding any undue side effects typically obtained in conventional techniques due to stacking faults.
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