High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method

摘要

We have studied the fabrication of solution processed aluminumoxide (AlO_x) gate dielectric at the maximum process temperature of 300 °C for a solution based zinc-tin-oxide (ZTO) thin-film-transistor (TFT). An AlO_x layer was spin-coated from a solution of aluminum chloride (A1C13) and then annealed at 300 °C for 1 h. The breakdown electrical field and leakage current density of the AlO_x were found to be ~4 MV cm~(-1) and 63 μA cm~(-2) at 1 MV cm~(-1), respectively. The ZTO layer was prepared by spin-coating or inkjet printing as an active layer of the TFT with AlO_s gate dielectric and then annealed at 300 °C for 1 h. The TFT made using spin coating exhibited the field-effect mobility of 33 cm~2 V~(-1) s~(-1) in the saturation region, a gate swing of 96 mV dec.~(-1) and a threshold voltage of ~1.2 V and the inkjet printed TFT showed a field-effect mobility of 24 cm~2 V~(-1) is~(-1).