The amorphous InGaZnO (α-IGZO) thin films were fabricated by sol-gel technology. The IGZO sol-gel was prepared by dissolving indium nitrate hydrate, zinc acetate dehydrate and gallium nitrate with a molar ratio of 1 :1 : 2 in methanol at room temperature. The concentration of the metal ions was maintained at 0. 3mol/L. The mixed sol was then stirred continuously at 70℃ for lh using a water bath until a clear and transparent homogeneous sol was formed. The α-IGZO thin film was spinning coated on the chip with a speed of 2000r/min. Then the film was hearted on hot plate at 150 ℃ for 15min and annealed at 350*C for lh in air and vacuum atmosphere. As a result, air annealing improved the transmittance of the α-IGZO thin film, while the vacuum atmosphere decreased the transmittance. The optical transmittance of the α-IGZO thin films annealed in air can reach to average 80%. All the thin films had smooth surface and the roughness RMS was less than 0. 6nm. The α-IGZO films annealed in vacuum atmosphere's roughness is bigger than that in air. The TFT's transfer characteristic was improved in vacuum atmosphere. The off current of the α-IGZO TFT annealed in vacuum atmosphere was 10-11 A, and the Ion/Ioff was 104.%采用溶胶-凝胶法制备了非晶铟镓锌氧化物(a-IGZO)薄膜,通过热重-差热示差技术分析了a-IGZO形成机理,并研究了热处理对a-IGZO薄膜的结构和光电性能影响.并用于薄膜晶体管(TFT)的有源层,制备的a-IGZO TFT,其具有明显的转移特性,其关态电流为10-11A,退火能够改善a-IGZO TFT器件性能,器件的开关比提高了两个数量级.
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