首页> 外文期刊>Journal of Materials Science >Reversible control of the electronic density of states at the Fermi level of Ca_3Co_4O_(9+δ) misfit-layered oxide single crystals through O~+/H~+ plasma exposure
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Reversible control of the electronic density of states at the Fermi level of Ca_3Co_4O_(9+δ) misfit-layered oxide single crystals through O~+/H~+ plasma exposure

机译:通过O〜+ / H〜+等离子体暴露可逆控制Ca_3Co_4O_(9 +δ)失配层氧化物单晶在费米能级下的电子态密度

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摘要

Misfit-layered Ca_3Co_4O_9 crystals were grown and characterized via XRD, SEM, and photo-emission spectroscopy (PES). The evolution of the intensity at the Fermi level (EF) with varying oxygen content was studied by PES. Oxygen species were successfully introduced and removed through O~+ and H~+ microwave-plasma (2.45 GHz, 2-5 mbar) treatments, respectively. A 5 min O~+ plasma exposure was observed to result into a drastic enhancement in the EF intensity, demonstrating the influence of oxygen content to the charge carrier population in layered cobalt-oxide materials.
机译:生长失配层的Ca_3Co_4O_9晶体,并通过XRD,SEM和光发射光谱(PES)进行表征。通过PES研究了费米能级(EF)随氧气含量的变化。分别通过O〜+和H〜+微波等离子体(2.45 GHz,2-5 mbar)处理成功引入和去除了氧气。观察到5分钟的O〜+等离子体暴露会导致EF强度急剧增加,这表明氧含量对层状氧化钴材料中电荷载流子的影响。

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