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首页> 外文期刊>Journal of Materials Science >Surface state charge dynamics in hydrazone-doped polyesters
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Surface state charge dynamics in hydrazone-doped polyesters

机译:掺杂聚酯的表面态电荷动力学

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Electronic properties of surface states in hydrazone-doped polyesters (HDPs) have been investigated using a series of thin-film Au/HDP/Al diode structures. Controlled space-charge-limited hole injection from the Au ohmic electrode under forward-bias was used to charge surface states in the vicinity of the Al blocking electrode. Subsequent reverse-biasing of the diodes to extract the remaining surface charge after suitable delay intervals permitted the occupation dynamics of holes trapped in the surface states to be determined. The decay times for trapped holes are found to depend upon the level of hydrazone doping in the films and also the initial trap occupancy following forward-bias charging. A simple surface-leakage model in which the leakage mobility is dependent upon the local surface electric field is found to provide a good description of the experimental data. The leakage model suggests that the minimum density of surface states is 4 x 10(12) cm(-2) and that these states lie within about 17 of the film surface.
机译:使用一系列薄膜Au / HDP / Al二极管结构研究了掺杂聚酯(HDP)中表面态的电子性质。在正向偏压下从Au欧姆电极进行的受控的空间电荷受限空穴注入被用来对Al阻挡电极附近的表面态进行充电。在适当的延迟间隔后,随后的二极管反向偏置以提取剩余的表面电荷,从而可以确定陷于表面状态的空穴的占据动态。发现陷阱空穴的衰减时间取决于薄膜中的掺杂水平以及正向偏压充电后的初始陷阱占有率。发现一个简单的表面泄漏模型,其中泄漏迁移率取决于局部表面电场,可以很好地描述实验数据。泄漏模型表明表面状态的最小密度为4 x 10(12)cm(-2),并且这些状态位于薄膜表面的约17个范围内。

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