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首页> 外文期刊>Journal of Materials Processing Technology >Electrochemical micromachining of micro-dimple arrays using a polydimethylsiloxane (PDMS) mask
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Electrochemical micromachining of micro-dimple arrays using a polydimethylsiloxane (PDMS) mask

机译:使用聚二甲基硅氧烷(PDMS)掩模对微凹坑阵列进行电化学微加工

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摘要

Micro-dimple arrays on the surfaces of engineering parts play an important role in the behaviour of these parts. Through-mask electrochemical micromachining (TMEMM) is a popular method for generating micro-dimple arrays with controlled size, location and density. However, in conventional TMEMM, the electrochemical machining must be preceded by photolithography, which is time-consuming and expensive in mass production. In this paper, a polydimethylsiloxane (PDMS) mask is used in TMEMM for generating high-quality micro-dimple arrays. Compared with photolithography, this has the advantage that the PDMS mask can be re-used and has a micro-scale pattern. This technique could therefore replace photolithography in the application of TMEMM to generate micro-dimple arrays. With a PDMS mask being used for generating micro-dimple arrays, three electrolyte flow modes are investigated, and a modified forward mode with a multi-slit structured cathode is proposed for the generation of arrays that have uniform micro-dimple distributions and dimensions. Using this method, arrays are generated with average micro-dimple dimensions of 106 mu m diameter and 10 mu m depth, with a low standard deviation (STDEV). In addition, the results show that both direct current and pulsed current can be used to generate micro-dimple arrays with a high degree of localization, although pulsed current produces deeper micro-dimples. (C) 2015 Elsevier B.V. All rights reserved.
机译:工程零件表面上的微凹坑阵列在这些零件的行为中起着重要作用。掩膜式电化学微加工(TMEMM)是一种流行的方法,用于生成尺寸,位置和密度受控的微凹坑阵列。然而,在常规的TMEMM中,电化学加工必须在光刻之前进行,这在批量生产中既费时又昂贵。在本文中,TMEMM中使用了聚二甲基硅氧烷(PDMS)掩模来生成高质量的微凹坑阵列。与光刻相比,它的优势在于PDMS掩模可以重复使用并具有微米级图案。因此,该技术可以在TMEMM的应用中取代光刻技术,以产生微凹坑阵列。在使用PDMS掩模生成微凹坑阵列的情况下,研究了三种电解质流动模式,并提出了一种具有多缝结构阴极的改进正向模式,用于生成具有均匀微凹坑分布和尺寸的阵列。使用这种方法,可以生成平均微凹坑尺寸为106微米,深度为10微米且具有低标准偏差(STDEV)的阵列。此外,结果表明,尽管脉冲电流会产生更深的微凹痕,但直流电和脉冲电流均可用于生成具有高度定位的微凹痕阵列。 (C)2015 Elsevier B.V.保留所有权利。

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