All ITO-based transparent resistive switching random access memory using oxygen doping method

摘要

Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of submicron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of > 100 cycles and a retention time of > 10(4) s at 85 degrees C, with a current ratio of similar to 10(2) to similar to 10(3). This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. (C) 2015 Elsevier B.V. All rights reserved.