Annealing effects of co-doping with Al and Sb on structure and optical-electricalproperties of the ZnO thin films

摘要

The ZnO thin films co-doped with Al and Sb have been successfully deposited by a sol-gel spin-coatingmethod on glass substrates and annealed at different temperature for 2 h in air. The annealing effectsof different temperature on the structure and biaxial stress were characterized by X-ray diffraction. Theresults revealed that the annealed ZnO thin films mainly consist of ZnO with wurtzite structure, and thebiaxial stress is lower during annealed at 550 °C. The annealed films have high transmittance in the visibleregion and show sharp absorption edges in the UV region. The optical band gap E_g values are 2.95,3.03,3.18 and 3.15 eV, which corresponding to the films annealed at 450, 500, 550, 600 °C, respectively. Theresistivity of thin films reaches a minimum when the annealing temperature at 550 °C. The conductingmechanism is contributed to Sb substitute for Zn inducing two corresponding Zn vacancies.