Enhanced ferroelectric properties in BiFe_(0.95)Mn_(0.05)O_3 thin films

摘要

The BiFe_(0.95)Mn_(0.05)O_3 (BFMO) thin films were deposited on Pt/Ti/SiO_2/Si substrates using a metal organic decomposition process combined with a sequential layer annealing method. The BFMO film annealed for 10 min/layer exhibits a much larger remanent polarization (P_r～81μC/cm~2), a lower coercive field (E_c～178 kV/cm), as well as stronger charge-retaining ability and fatigue resistance in comparison with that annealed for 2 min/layer, demonstrating that prolonging the annealing time can favor the improvementof the ferroelectric properties ofBFMOfilm. These results are discussed basedonthe phase transition as well as the formation of defect complexes between oxygen vacancies and acceptors during the annealing treatment.