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Microstructural characterization of nanocrystalline SiC synthesized by high-energy ball-milling

机译:高能球磨合成纳米晶SiC的微观结构表征

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Carbide preparation in a conventional route requires a huge instrumentation regarding melting the metal and graphite under vacuum at a very high temperature. However, nanocrystalline metal carbides can be easily produced by mechanical milling of powder ingredients at room temperature. This article reports on the preparation and microstructural characterization of nanocrystalline SiC by mechanical milling of Si and graphite powders under inert atmosphere at room temperature. XRD patterns of ball-milled powders clearly reveal that the SiC phase is initiated after 5 h of milling and the stoichiometric SiC is formed after 15 h of milling. Microstructure in terms of different lattice imperfections of ball-milled samples is characterized by employing Rietveld's method of structure refinement. The phase transformation kinetics studied through Rietveld's method reveals that crystalline Si powder is converted into amorphous Si during ball-milling and SiC phase is formed through the solid-state reaction of nanocrystalline graphite and amorphous Si powders during ball-milling.
机译:传统方法中的碳化物制备需要大量的仪器,用于在非常高的温度下在真空下熔化金属和石墨。然而,通过在室温下机械研磨粉末成分可以容易地生产纳米晶金属碳化物。本文报道了在室温下惰性气氛下通过机械研磨硅粉和石墨粉制备纳米晶态SiC的方法和微结构表征。球磨粉末的XRD图谱清楚地表明,在研磨5小时后开始SiC相,在研磨15小时后形成化学计量的SiC。球磨样品的不同晶格缺陷的微观结构是通过采用Rietveld的结构细化方法来表征的。通过Rietveld方法研究的相变动力学表明,在球磨过程中,结晶硅粉会转变为非晶硅,而在球磨过程中,纳米晶石墨和非晶硅粉会通过固相反应形成SiC相。

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