The electronic band structures of InN_xAs_(1_x), InN_xSb_(1_x) and InAs_xSb_(1-x)alloys

摘要

The band gap bowings of InN_xAs_(1_x), InN_xSb_(1_x), and InN_xSb_(1_x) alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp~3d~2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN_xAs_(1-x) and InN_xSb_(1_x) compared to InAs_xSb_(1-x) alloys. Moreover, the variation of the fundamental band gaps of InN_xSb_(1_x) alloys is sharper than that of InN_xAs_(1-x) alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN_xSb_(1_x) than in InN_xAs_(1-x) alloys to decrease the corresponding effective masses of the electrons around F points.