Theory of conduction band structure of InN_xSb_(1-x) and GaN_xSb_(1-x) dilute nitride alloys

A. Lindsay; E. P. OReilly; A. D. Andreev; T. Ashley

首页> 外文期刊>Physical review >Theory of conduction band structure of InN_xSb_(1-x) and GaN_xSb_(1-x) dilute nitride alloys

【24h】

Theory of conduction band structure of InN_xSb_(1-x) and GaN_xSb_(1-x) dilute nitride alloys

机译：InN_xSb_（1-x）和GaN_xSb_（1-x）稀氮化合金的导带结构理论

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The dependence of the optical band gap of InN_xSb_(1-x)and GaN_xSb_(1-x) on nitrogen content has been calculated using an sp~3s~* tight-binding Hamiltonian in large supercell calculations that explicitly include the effects of allowing a random distributi

机译：InN_xSb_（1-x）和GaN_xSb_（1-x）的光学带隙对氮含量的依赖性已在大型超级电池计算中使用sp〜3s〜*紧密结合的哈密顿量进行了计算，其中明确包括了允许随机分布

著录项

来源
《Physical review》 |2008年第16期|428-437|共10页
作者
A. Lindsay; E. P. OReilly; A. D. Andreev; T. Ashley;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
Ⅲ-Ⅴ semiconductors; semiconductor compounds; general theory; scattering mechanisms;

机译：Ⅲ-Ⅴ族半导体;半导体化合物一般理论散射机制;

相似文献

外文文献
中文文献
专利

1. Negative Band Gaps in Dilute InN_xSb_(1-x) Alloys [J] . T. D. Veal, I. Mahboob, C. F. McConville Physical review letters . 2004,第13期

机译：稀InN_xSb_（1-x）合金中的负带隙
2. Band gap reduction in InN_xSb_(1-x) alloys: Optical absorption, k • P modeling, and density functional theory [J] . W. M. Linhart, M. K. Rajpalke, J. Buckeridge, Applied Physics Letters . 2016,第13期

机译：InN_xSb_（1-x）合金中的带隙减小：光吸收，k•P建模和密度泛函理论
3. The electronic band structures of InN_xAs_(1_x), InN_xSb_(1_x) and InAs_xSb_(1-x)alloys [J] . Rezek Mohammad, Senay Katircioglu Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2009,第1a2期

机译：InN_xAs_（1_x），InN_xSb_（1_x）和InAs_xSb_（1-x）合金的电子能带结构
4. Zn_(1-x)Ni_xS dilute alloy semiconductor thin films: experimentally realising intermediate band potential using a combinatorial approach [C] . K. Hutchings, D. W. Lane, K. D. Rogers, 7th photovoltaic science, applications and technology conference . 2011

机译：Zn_（1-x）Ni_xS稀合金半导体薄膜：使用组合方法实验性地实现中间带电势
5. QUANTUM OSCILLATIONS IN THE TRANSVERSE MAGNETORESISTANCE (SHUBNIKOV - DE HAAS EFFECT) AND ELECTRONIC CONDUCTION IN THE DILUTED MAGNETIC SEMICONDUCTOR MERCURY(1-X)IRON(X)SELENIDE. [D] . VAZIRI, MOJTABA. 1985

机译：横向磁阻（SHUBNIKOV-DE HAAS效应）中的量子振荡和稀释的磁半导体（1-X）铁（X）硒中的电子传导。
6. Optical absorption of dilute nitride alloys using self-consistent Green’s function method [O] . Masoud Seifikar, Eoin P O’Reilly, Stephen Fahy 2014

机译：使用自洽格林函数方法对稀氮化物合金的光吸收
7. Electronic band structures of Si$_{1-x}$Ge$_x$, Si$_{1-x}$Sn$_x$ and Ge$_{1-x}$Sn$_x$semiconductor alloys [O] . P.M. Yakibchuk, O.V. Bovgyra, M.V. Kovalenko, 2020

机译：Si $ _ {1-x} $ GE $ _X $，SI $ _ {1-x} $ SN $ _ $和GE $ _ {1-x} $ SN $ _ $ $半导体合金

Theory of conduction band structure of InN_xSb_(1-x) and GaN_xSb_(1-x) dilute nitride alloys

摘要

著录项

相似文献

相关主题

期刊订阅