Structure and photovoltaic characteristics of CuInSe_2 thin films prepared by pulse-reverse electrodeposition and selenization process

摘要

In this study, CuInSe_2 thin films were prepared by pulse-reverse electrodeposition and selenization process and characterized by X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM). The pulse-deposited films show well adherent to the substrate and smooth surface with fine grains. The chalcopyrite structure of CuInSe_2 with enhancement in crys-tallinity was observed for the films after selenization treatment in Se vapor. The best solar cell fabricated using the resultant films as absorber layers within a Ni-Al/ZnO:Al/i-ZnO//CdS/CIS/Mo/soda-lime glass structure showed an efficiency of 1.42 percent under AM 1.5 illumination.