Simultaneous growth of SiC nanowires, SiC nanotubes, and SiC/SiO_2 core-shell nanocables

摘要

SiC nanowires, SiC/SiO_2 core-shell nanocables, and SiC nanotubes have been synthesized simultaneously by direct heating Si powders and multiwall carbon nanotubes (MWCNTs). The as-obtained SiC nanowires are generally 100 nm in diameter and several tens of micrometers in length, the nanocables consist of a 20-30 nm diameters single-crystalline SiC core covered by a uniform layer of about 20 nm thick amorphous SiO_2, and the nanotubes with very narrow hollow channel have outer diameters of about 20 nm. The characteristics of the products are analyzed by various methods, results of which indicating that temperature and ambience are two key factors for the formation of the three different products; their possible growth mechanisms are also discussed.