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首页> 外文期刊>Applied Physics Letters >Fabrication of ZnS/SiC nanocables, SiC-shelled ZnS nanoribbons (and sheets), and SiC nanotubes (and tubes)
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Fabrication of ZnS/SiC nanocables, SiC-shelled ZnS nanoribbons (and sheets), and SiC nanotubes (and tubes)

机译:ZnS / SiC纳米电缆,带SiC壳的ZnS纳米带(和片)和SiC纳米管(和管)的制造

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摘要

Here we report on the synthesis of ZnS/SiC nanocables and SiC nanotubes and other relevant structures via a controllable two-stage thermal process using ZnS nanowires, nanoribbons, and sheets as templates. Within the cables, the ZnS cores are polytypes of fcc- and hcp-ZnS with similar to50-130 nm diameter, and the SiC shells are polycrystalline beta-SiC with similar to15-50 nm thickness. SiC nanotubes were formed through simple removal of ZnS cores from the cables. Room-temperature photoluminescence of the SiC nanotubes displays a strong green emission band centered at similar to517 nm. The nanostructures described herewith may be valuable in the blocks of advanced semiconducting devices. (C) 2004 American Institute of Physics.
机译:在这里,我们通过使用ZnS纳米线,纳米带和薄板作为模板的可控两阶段热过程,报告了ZnS / SiC纳米电缆和SiC纳米管以及其他相关结构的合成。在电缆内,ZnS芯是直径约50-130 nm的fcc-和hcp-ZnS的多型,而SiC壳是厚度约15-50 nm的多晶β-SiC。 SiC纳米管是通过简单地从电缆中去除ZnS芯而形成的。 SiC纳米管的室温光致发光显示出强的绿色发射带,其中心与517 nm相似。本文所述的纳米结构在先进的半导体器件的模块中可能是有价值的。 (C)2004美国物理研究所。

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