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Deep Defect Levels in the Wurtzite Semiconductors: SiC, ZnS, ZnSe and ZnTe

机译：纤锌矿半导体中的深度缺陷：siC，Zns，Znse和ZnTe

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摘要

The chemical trends in defect levels of substitutional impurities and vacancies in SiC, ZnS, ZnSe and ZnTe are predicted. (Atomindex citation 15:069722)

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作者
Tuncay, C.; Tomak, M.;
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年度 1984
页码 1-18
总页数 18
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor Materials; Silicon Carbides; Zinc Selenides; Zinc Sulfides; Zinc Tellurides; Crystal Defects; Energy Levels; Electronic Structure;

机译：半导体材料;碳化硅;硒化锌;硫化锌;碲化锌;晶体缺陷;能级;电子结构;

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专利

1. Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds [J] . Gorkavenko TV, Zubkova SM, Makara VA, Semiconductors . 2007,第8期

机译：ZnS，ZnSe，ZnTe和CdTe纤锌矿型半导体化合物的能带结构的温度依赖性
2. Ab initio study on the magnetism in ZnO-, ZnS-, ZnSe- and ZnTe-based diluted magnetic semiconductors [J] . Sato K., Katayama-Yoshida H. Physica status solidi, B. Basic research . 2002,第2期

机译：从头开始研究ZnO-，ZnS-，ZnSe-和ZnTe基稀磁半导体中的磁性
3. ROLE OF D ELECTRONS IN THE ZINC-BLENDE SEMICONDUCTORS ZNS, ZNSE, AND ZNTE [J] . Lee GD., Ihm J., Lee MH. Physical Review, B. Condensed Matter . 1995,第3期

机译：D电子在ZNS，ZNSE和ZNTE的ZincC-Blende半导体中的作用
4. Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, A1N, GaN, ZnO and ZnSe [C] . I. Yonenaga 21st International Conference on Defects in Semiconductors (ICDS-21) Jul 16-20, 2001 Giessen, Germany . 2001

机译：宽带隙半导体的热机械稳定性：SiC，AlN，GaN，ZnO和ZnSe的高温硬度
5. The Role of Deep Level States in the Optical and Electronic Properties of ZnSe Nanowires [D] . Wisniewski, David. 2018

机译：深能级状态在ZnSe纳米线的光学和电子特性中的作用
6. Long spin-flip time and large Zeeman splitting of holes in type-II ZnTe/ZnSe submonolayer quantum dots [O] . H. Ji, S. Dhomkar, R. Wu, -1

机译：II型ZnTe / ZnSe亚单层量子点中的长自旋翻转时间和大的Zeeman裂隙
7. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe [O] . Wolf, H, Filz, T, Ostheimer, V, 2000

机译：CDTE，ZnTe和ZnSe中由Ag原子形成的缺陷络合物
8. Empirical Tight-Binding Band Structure of Wurtzite Semiconductors: SiC, ZnSe and ZnTe [R] . Tuncay, C., Tomak, M. 1984

机译：纤锌矿半导体的经验紧束带结构：siC，Znse和ZnTe

Deep Defect Levels in the Wurtzite Semiconductors: SiC, ZnS, ZnSe and ZnTe

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