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Nanoscale integration of SiC/SiO_2 core-shell nanocables in diamond through a simultaneous hybrid structure fabrication

机译:通过同时混合结构制造将SiC / SiO_2核壳纳米电缆在金刚石中进行纳米级集成

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摘要

The nanoscale integration of SiC nanocables in a diamond thin film is achieved through a novel synthetic pathway, which combines Fe catalyst and detonation nanodiamond seeding technique in a microwave plasma chemical vapor deposition process. The obtained hybrid structures show controllable SiC nanocable fraction depending on the relative fraction of iron catalyst and diamond seeds. The SiC nanocable has a conical structure with l0nm diameter SrC core, surrounded by SiO_2 shell. The diamond crystals show high quality/cry stallinity even for hybrid structures featuring an increasing SiC nanocable fraction. In the end, the growth behavior of the hybridstructure is discussed.
机译:SiC纳米电缆在金刚石薄膜中的纳米级集成是通过一种新颖的合成途径实现的,该途径在微波等离子体化学气相沉积过程中结合了Fe催化剂和爆轰纳米金刚石籽晶技术。所获得的杂化结构显示出可控的SiC纳米电缆分数,具体取决于铁催化剂和金刚石种子的相对分数。 SiC纳米电缆具有圆锥结构,其直径为10nm的SrC核,被SiO_2壳包围。即使对于具有增加的SiC纳米电缆比例的混合结构,金刚石晶体也显示出高品质/抗结晶度。最后,讨论了混合结构的生长行为。

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  • 来源
    《Applied Physics Letters》 |2012年第19期|p.193102.1-193102.4|共4页
  • 作者单位

    Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, 57076 Siegen, Germany;

    Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, 57076 Siegen, Germany;

    Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, 57076 Siegen, Germany;

    Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, 57076 Siegen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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