首页> 外文期刊>Surface & Coatings Technology >Electrochemical corrosion behavior of modified MAO film on magnesium alloy AZ31 irradiated by high-intensity pulsed ion beam
【24h】

Electrochemical corrosion behavior of modified MAO film on magnesium alloy AZ31 irradiated by high-intensity pulsed ion beam

机译:强脉冲离子束辐照镁合金AZ31上改性MAO膜的电化学腐蚀行为

获取原文
获取原文并翻译 | 示例
           

摘要

Micro-arc oxidation (MAO) films on AZ31 magnesium alloy were modified by high-intensity pulsed ion beam(HIPIB) irradiation with ion energy of 300keV at 200A/cm~2 with 1-10 shots. A compact and solidified layer was prepared on the irradiated MAO films. The electrochemical impedance spectrum (EIS) of the MAO films in 3.5% NaCl solution was measured with varying the immersion time. The Nyquist plots for EIS showed typical capacitive arc and inductive loop. The diameters for capacitive arc and inductive loop are both increased and then decreased with increasing irradiation shot number, the maximal value for diameters obtained at 200A/cm~2 with 5 shots at immersion time of 5h achieved to 6×10~7Ω and [U+F020]1.5×10~5Ω,[U+F02C] respectively. With immersion time augment, the diameters for capacitive arc and inductive loop of Nyquist plots both decreased. Based on the results of EIS measurements, appropriate equivalent circuits for the modified layers were proposed to fit the EIS for MAO films. It is found that the enhancement in corrosion property of ablated MAO films is mainly caused by improvement of continuity and compaction of films irradiated by HIPIB, which suppressed the corrosion process by holding back the transfer of electrolyte through the modified films to magnesium substrate during immersion.
机译:用200ke / cm〜2的300keV离子能量的高强度脉冲离子束(HIPIB)辐照1-10次,对AZ31镁合金上的微弧氧化膜进行改性。在经辐照的MAO膜上制备致密且固化的层。通过改变浸没时间来测量MAO膜在3.5%NaCl溶液中的电化学阻抗谱(EIS)。 EIS的奈奎斯特图显示了典型的电容性电弧和电感性环路。电容电弧和感应回路的直径都随照射次数增加而增加,然后减小,在200A / cm〜2的条件下,在5h的浸入时间为5h时获得的5个直径的最大值达到6×10〜7Ω,[U + F020] 1.5×10〜5Ω,[U + F02C]。随着浸入时间的增加,奈奎斯特曲线的电容电弧和感应环路的直径均减小。根据EIS测量的结果,提出了适合于改性层的等效电路,以适合MAO膜的EIS。发现烧蚀的MAO膜的腐蚀性能的增强主要是由HIPIB辐照的膜的连续性和致密性的改善引起的,这通过在浸入过程中阻止电解质通过改性膜转移到镁基材上而抑制了腐蚀过程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号