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Dual-magnetron open field sputtering system for sideways deposition of thin films

机译:双磁控开放场溅射系统,用于横向沉积薄膜

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摘要

A dual-magnetron system for deposition inside tubular substrates has been developed. The two magnetrons are facing each other and have opposing magnetic fields forcing electrons and thereby also ionized material to be transported radially towards the substrate. The depositions were made employing direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS). To optimize the deposition rate, the system was characterized at different separation distances between the magnetrons under the same sputtering conditions. The deposition rate is found to increase with increasing separation distance independent of discharge technique. The emission spectrum from the HiPIMS plasma shows a highly ionized fraction of the sputtered material. The electron densities of the order of 10(16) m(-3) and 10(18) m(-3) have been determined in the DCMS and the HiPIMS plasma discharges respectively. The results demonstrate a successful implementation of the concept of sideways deposition of thin films providing a solution for coating complex shaped surfaces.
机译:已经开发了用于在管状基板内部沉积的双磁控管系统。这两个磁控管彼此面对,并具有迫使电子产生相反方向的磁场,从而也迫使离子化材料径向向基板传输。使用直流磁控溅射(DCMS)和高功率脉冲磁控溅射(HiPIMS)进行沉积。为了优化沉积速率,在相同的溅射条件下,在磁控管之间的不同分离距离处对系统进行了表征。发现沉积速率随着分离距离的增加而增加,而与放电技术无关。 HiPIMS等离子体的发射光谱显示出溅射材料的高度电离部分。已经分别在DCMS和HiPIMS等离子体放电中确定了10(16)m(-3)和10(18)m(-3)量级的电子密度。结果证明了薄膜横向沉积概念的成功实施,为涂覆复杂形状的表面提供了解决方案。

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