Simulation of the Sputtered Atom Transport During a Pulse Deposition Process in Single- and Dual-Magnetron Systems

摘要

Results are presented for Monte Carlo simulation of the sputtered atom transport in systems with one and two magnetrons operating in pulse mode. The magnetron system geometry as well as gas pressure and the gap between the targets and substrate strongly influence the features of the forward and backward sputtered atom flows, time behavior, and energy of depositing atoms. The shape of current pulses affects the modulation level of the atom flows that is higher in the case of triangular pulses. The magnetron systems, with inclined targets and a V-shaped target, feature the higher efficiency of atom transport (as compared with the dual coplanar target system or an ordinary one with the flat target) due to the decrease of the atom loss on the chamber walls and shortening the path of the sputtered atoms to the substrate.