首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Plasmon-Induced Hot Carriers Transport in Metallic Ballistic Junctions
【24h】

Plasmon-Induced Hot Carriers Transport in Metallic Ballistic Junctions

机译:等离子诱导的金属弹道交界处的热载流子传输。

获取原文
获取原文并翻译 | 示例
           

摘要

The recent surge of theoretical research and experimental effort to devise plasmon-induced hot-carrier devices for radiation harvesting relies on the capability to separate charges. at metal semiconductor interfaces; however, the demand for momentum conservation of hot carriers at these interfaces sets, an inherent limit to the quantum yield of such devices, making them currently less efficient than commonly used solar cells. Here we report experiments that suggest that ballistic-whole-metal plasmon-induced hot carriers junctions based on atomic contacts could potentially be as efficient as semiconductor-based photovoltaic devices.
机译:设计用于辐射收集的等离子体激元感应的热载体设备的理论研究和实验工作的最新涌现依赖于分离电荷的能力。在金属半导体接口处;然而,在这些界面处对热载流子的动量守恒设置的需求是对此类器件的量子产率的固有限制,这使得它们目前的效率低于常用的太阳能电池。在这里,我们报告的实验表明,基于原子接触的弹道-全金属等离子体激元诱导的热载流子结可能与基于半导体的光伏器件一样有效。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号