Investigation of Plasmon-Induced Losses in Quasi-Ballistic Transport

摘要

We present an ensemble Monte Carlo (EMC) simulation of the effect of electron-electron (e-e) and electron-plasmon (e-pl) interactions on the transient behavior of electrons under high energy injection conditions. It is shown that, in a situation that closely resembles that obtained in the base of a planar-doped barrier (PDE) transistor, the coulombic interaction severly limits the possibility of ballistic transport.