Thermodynamic Behavior of Excitonic Emission Properties in Manganese- and Zinc-Codoped Indium Phosphide Diluted Magnetic Semiconductor Layers

摘要

The thermodynamic behavior of excitonic emission properties in manganese- and zinc-codoped indium phosphide (inMnP:Zn) diluted magnetic semiconductor (DMS) layers was investigated. Compared to the InMnPrZn DMS layer (Mn ≈ 0.06%), the inhomogeneous thennal-broadening of the excitonic-emission line-width in InMnP:Zn DMS layer (Mn ≈ 0.29%) is dominant at lower temperatures. This is attributed to the increase of ionized impurity scattering from Mn ions and results in the increase of exciton-phonon coupling strength. As aconsequence, high Mn content can lead to low excitonic emission efficiency, although generally a larger Mn content is favorable to increase the Curie temperature of a DMS material.