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Negative differential resistance devices by using N-doped graphene nanoribbons

机译:使用N掺杂石墨烯纳米带的负差分电阻器件

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摘要

Recently, extensive efforts have been devoted to the investigations of negative differential resistance (NDR) behavior in graphene. Here, by performing fully self-consistent density functional theory calculations combined with non-equilibrium Green’s function technique, we investigate the transport properties of three molecules from conjugated molecule, one-dimension alkane chain, and single molecule magnet, which are sandwiched between two N-doped zigzag and armchair graphene nanoribbons (GNRs). We observe robust NDR effect in all examined molecular junctions including benzene, alkane, and planar four-coordinated Fe complex. Through the analyses of the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of N-doped GNRs and the bias-dependent effective coupling between the discrete frontier molecular orbitals and the subbands of N-doped GNRs are responsible for the observed NDR phenomenon. These theoretical findings imply that N-doped GNRs hold great potential for building NDR devices based on various molecules.
机译:近来,已经广泛地致力于研究石墨烯中的负差动电阻(NDR)行为。在这里,通过执行完全自洽的密度泛函理论计算并结合非平衡格林函数技术,我们研究了共轭分子,一维烷烃链和单分子磁体中夹在两个N之间的三个分子的传输性质掺杂的锯齿形和扶手椅形石墨烯纳米带(GNR)。我们在包括苯,烷烃和平面四配位的Fe络合物在内的所有分子连接中均观察到了强大的NDR效应。通过对计算出的电子结构和依赖于偏压的传输系数的分析,我们发现,N掺杂GNRs的态态密度较窄,离散前沿分子轨道与N掺杂GNRs子带之间的偏压依赖有效耦合。是造成观察到的NDR现象的原因。这些理论发现暗示,N掺杂的GNR在基于各种分子构建NDR器件方面具有巨大的潜力。

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