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Carbonyl mediated attachment to silicon: Acetaldehyde on Si(001)

机译:羰基介导的与硅的附着:Si(001)上的乙醛

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A detailed understanding of the chemical reactions of organic molecules with semiconductor surfaces will greatly aid schemes for the incorporation of organic functionality into existingtechnologies. In this paper we report on the reaction of acetaldehyde (CH3CHO) with silicon (001) as revealed by a combination of temperature-dependent scanning tunneling microscopy (STM)experiments and density functional theory (DFT). We observe that low-coverage exposures at room temperature result almost exclusively in the formation of a single adsorbate species. Conversion ofthis structure into thermodynamically favored bridge-bonded structures is achieved through temperature anneals between 150-250℃. We determine the chemical identity of each of theexperimentally observed species by comparison with DFT total energy calculations and simulated STM images. Calculations of transition states are used to formulate a full reaction pathwayexplaining the formation of the observed species. Excellent agreement is found between our experimental measurements and theoretical calculations. The results also present a picture consistentwith our previous work on acetone and reveal a general reaction pattern for molecules containing the acetyl COCH_3functional group, where the initial attachment to surface is mediated by acarbonyl C=0 group. This suggests that modification of the residue R will facilitate in binding otherelectronically active molecules to the surface in a controlled fashion.
机译:对有机分子与半导体表面化学反应的详细理解将极大地帮助将有机功能结合到现有技术中的方案。本文结合温度依赖性扫描隧道显微镜(STM)实验和密度泛函理论(DFT)揭示了乙醛(CH3CHO)与硅(001)的反应。我们观察到,室温下的低覆盖率暴露几乎完全导致单个吸附物物种的形成。通过在150-250℃之间进行温度退火,可以将该结构转变为热力学上受支持的桥键结构。通过与DFT总能量计算和模拟STM图像进行比较,我们确定了每个实验观察物种的化学身份。过渡态的计算被用来制定一个完整的反应路径,解释观察物种的形成。在我们的实验测量结果和理论计算值之间发现了极好的一致性。结果还提供了与我们先前在丙酮上的工作相符的图片,并揭示了含有乙酰基COCH_3官能团的分子的一般反应模式,其中表面的初始附着是由羰基C = 0介导的。这表明残基R的修饰将有助于以受控方式将其他电子活性分子结合至表面。

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