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Structures and stability of medium silicon clusters.II.Ab initio molecul orbital calculations of Si_(12)-Si_(20)

机译:中硅团簇的结构与稳定性II.Si_(12)-Si_(20)的从头算分子轨道计算

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Ab initio all-electron molecular-orbital calculations are carried out to study the structures and relative stability of low-energy silicon clusters (Si_n,n=12-20).Selected geometric isomers include those predicted by Ho et al [Nature (London) 392,582 (1998)] based on an unbiased search with tight-binding/genetic algorithm,as well as those found by Rata et al.[Phys.Rev.Lett.85,546 (2000)] based on density-functional tight-binding/single-parent evolution algorithm.These geometric isomers are optimized at the M011er-Plesset (MP2) MP2/6-31G(d) level.The single-point energy at the coupled-cluster single and double substitutions (including triple excitations) [CCSD(T)] CCSD(T)/6-31G(d) level for several low-lying isomers are further computed.Harmonic vibrational frequency analysis at the MP2/6-31G(J) level of theory is also undertaken to assure that the optimized geometries are stable.For Si_(12)-Si_(17) and Si_(19) the isomer with the lowest-energy at the CCSD(T)/6-31G(d) level is the same as that predicted by Ho et al.,whereas for Si_(18) and Si_(20),the same as predicted by Rata et al.However,for Si_(14) and Si_(15),the vibrational frequency analysis indicates that the isomer with the lowest CCSD(T)/6-31G(d) single-point energy gives rise to imaginary frequencies.Small structural perturbation onto the Si_(14) and Si_(15) isomers can remove the imaginary frequencies and results in new isomers with slightly lower MP2/6-31G(J) energy;however the new isomers have a higher single-point energy at the CCSD(T)/6-31G(J) level.For most Si_n (n=12- 18,20) the low-lying isomers are prolate in shape,whereas for Si_(19) a spherical-like isomer is slightly lower in energy at the CCSD(T)/6-31G(d) level than low-lying prolate isomers.
机译:从头开始进行全电子分子轨道计算以研究低能硅团簇(Si_n,n = 12-20)的结构和相对稳定性。选定的几何异构体包括Ho等人[Nature(London)]预测的那些[392,582(1998)]基于紧结合/遗传算法的无偏搜索,以及Rata等人[Phys.Rev.Lett.85,546(2000)]基于密度-功能紧结合/单一的发现父进化算法。这些几何异构体在M011er-Plesset(MP2)MP2 / 6-31G(d)级别进行了优化。耦合簇单双取代(包括三重激发)的单点能量[CCSD( (T)]进一步计算了几种低位异构体的CCSD(T)/ 6-31G(d)能级。还对理论上MP2 / 6-31G(J)的谐波振动频率进行了分析,以确保优化对于Si_(12)-Si_(17)和Si_(19),在CCSD(T)/ 6-31G(d)能级具有最低能量的异构体是相同的与Ho等人预测的一样,对于Si_(18)和Si_(20),与Rata等人的预测相同,但是对于Si_(14)和Si_(15),振动频率分析表明具有最低CCSD(T)/ 6-31G(d)单点能量的异构体会产生虚数频率。对Si_(14)和Si_(15)异构体的小结构扰动可以消除虚数频率并产生新的异构体MP2 / 6-31G(J)能量稍低;但是新异构体在CCSD(T)/ 6-31G(J)的水平下具有更高的单点能量。对于大多数Si_n(n = 12- 18,20 )低洼的异构体呈长圆形,而对于Si_(19),球形的异构体在CCSD(T)/ 6-31G(d)水平上的能量略低于低洼的长圆形异构体。

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