首页> 外文期刊>Polymer: The International Journal for the Science and Technology of Polymers >Influence of thermal annealing temperature on electro-optical properties of polyoctylfluorene thin film: Enhancement of luminescence by self-doping effect of low-content α phase crystallites
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Influence of thermal annealing temperature on electro-optical properties of polyoctylfluorene thin film: Enhancement of luminescence by self-doping effect of low-content α phase crystallites

机译:热退火温度对聚辛基芴薄膜的电光性能的影响:低含量α相微晶的自掺杂效应增强发光

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摘要

As spin-coating polyoctylfluorene (PFO) thin films were thermally annealed at various temperatures and their photoluminescence, electroluminescence and crystalline nanostructure was characterized. α phase PFO generate when annealing temperature reaches 80 °C and the performance of corresponding electroluminescence device was dramatically enhanced due to the self-doping effect. As the annealing temperature increases, the photoluminescence and electroluminescence decrease. Both in out-of-plane and in-plane grazing incident X-ray diffraction pattern the PFO thin film annealed at higher temperature has stronger diffraction peaks, indicating higher degree of crystallinity. The formation of vacancy defects and increase of interface roughness in crystalline process is considered as the reason for the reduction of luminescence. These results show that the electro-optical properties of PFO can be enhanced through controlling annealing temperature to form α phase PFO in low degree of crystallinity.
机译:由于旋涂聚辛基芴(PFO)薄膜在各种温度下进行热退火,并表征了它们的光致发光,电致发光和晶体纳米结构。当退火温度达到80°C时,会生成α相PFO,并且由于自掺杂效应,相应的电致发光器件的性能也会大大提高。随着退火温度的升高,光致发光和电致发光降低。在面外和面内掠入射X射线衍射图中,在较高温度下退火的PFO薄膜都具有较强的衍射峰,表明较高的结晶度。晶体过程中空位缺陷的形成和界面粗糙度的增加被认为是减少发光的原因。这些结果表明,通过控制退火温度以形成低结晶度的α相PFO,可以提高PFO的电光性能。

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