Origin of self-assembled step and terrace formation at the Si(001)-SiO2 interface - art. no. 035301

摘要

We demonstrate that >1 mum lateral scale atomic height range steps and terraces can be formed at the Si(001)-SiO2 interface by annealing at high temperatures, such as 1325 degreesC, in an Ar atmosphere containing a small fraction of O-2. The kinetics of the step-terrace morphology formation are quantitatively consistent with a model in which Si is emitted from the interface during the annealing, diffuses in the oxide, and returns. The step-terrace morphology is a logical consequence of recent theoretically proposed ordered interfacial structures at this interface, supporting the structures' existence. [References: 23]